● 1Gbit NAND Flash memory
- single-level cell (SLC) technology
- Block size : 64pages(128K + 8K bytes)
- Page Size : 2176 bytes (2048 + 128 bytes)
- Device : 1Gb (1024 blocks)
● Read performance
- Random access: 45µs(Max.)
- Sequential access : 20ns(Min.)
● Write performance
- Page program time : 300µs (Typ.)
- Sequential access : 20ns(Min.)
- Block erase Time : 2.5ms(Typ.)
- Page read time: 45µs maximum (w/l ECC).
● Serial Interface
-standard SPI: CLK,CS#,SI,SO,WP#
-Dual SPI :CLK,CS#,SIO0,SIO1,WP#
-Quad SPI:CLK,CS#SIO0,SIO1,SIO2,SIO3
● Operating Temperature
-40℃ to 85℃
● Storage Temperature
-55℃ to 125℃
● 8K-Byte OTP
● Advanced Security Features
-Built in 8bit per sector ECC.
-Internal data move by page with ECC
● Supports IDLE and SLEEP power saving modes.
● Command/Address/Data Multiplexed I/O Port
● High Performance
-104M for fast read.
● 6KV ESD Protection
● Hardware Data Protection.
- Program/Erase Lockout During Power Transitions.
-Date protection during data transfer even if unplugged/power off.
● Voltage Supply
- vcc:3.3V (3.0V-3.6V).
● Package
- 8-pin WSON (8*6mm).
-All packages are RoHS Compliant and Halogen-free.
● Data retention: 10 years
● Erasure times up to 100,000 times
